埋 层 硅 外 延 片 Silicon epitaxial wafers with buried layers  ICS  29.045 CCS  H 82   中华人民共和国国家标准 GB/T 44334—2024 2024-08-2 3发布 2025-03-0 1实施     国家市场监督管理总局 国家标准化管理委员会 发 布目　　次 前言   ·····································································································   Ⅲ 1     范围   ··································································································   1 2     规范性引用文件   ······················································································   1 3     术语和定义   ···························································································   1 4     产品分类   ······························································································   2 5     技术要求   ······························································································   2      5.1     衬底材料   ·························································································   2      5.2     外延层   ···························································································   2      5.3     几何参数   ·························································································   4      5.4     表面金属   ·························································································   4      5.5     表面质量   ·························································································   4      5.6     边缘   ······························································································   5      5.7     其他   ······························································································   5 6     试验方法   ······························································································   5 7     检验规则   ······························································································   6      7.1     检查与验收   ······················································································   6      7.2     组批   ······························································································   6      7.3     检验项目   ·························································································   6      7.4     取样   ······························································································   6      7.5     检验结果的判定   ·················································································   6 8     标志、包装、运输、贮存和随行文件   ································································   7      8.1     标志和包装   ······················································································   7      8.2     运输和贮存   ······················································································   8      8.3     随行文件   ·························································································   8 9     订货单内容   ···························································································   8 GB/T 44334—2024     Ⅰ 前　　言 本文件按照GB/T 1.1—2020《标准化工作导则　第1部分：标准化文件的结构和起草规则》的规 定起草。 请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。 本文件由全国半导体设备和材料标准化技术委员会（SAC/TC 203）与全国半导体设备和材料标准 化技术委员会材料分技术委员会（SAC/TC 203/SC 2）共同提出并归口。 本文件起草单位：南京国盛电子有限公司、西安龙威半导体有限公司、上海晶盟硅材料有限公司、 浙江金瑞泓科技股份有限公司、中环领先半导体材料有限公司、浙江丽水中欣晶圆半导体科技有限公 司、南京盛鑫半导体材料有限公司、有色金属技术经济研究院有限责任公司、河北普兴电子科技股份有 限公司、盖泽华矽半导体科技（上海）有限公司、赛晶亚太半导体科技（浙江）有限公司。 本文件主要起草人：仇光寅、王银海、谢进、骆红、贺东江、马林宝、顾广安、李慎重、李春阳、 徐西昌、徐新华、袁夫通、刘小青、米姣、周益初、张强。   GB/T 44334—2024     Ⅲ 埋 层 硅 外 延 片 1　范围   本文件规定了埋层硅外延片的产品分类、技术要求、试验方法、检验规则及标志、包装、运输、贮 存、随行文件和订货单内容。 本文件适用于具有埋层结构的硅外延片的生产制造、测试分析和质量评价，产品主要用于制作集成 电路芯片和半导体分立器件。 2　规范性引用文件   下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文 件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用 于本文件。 GB/T 1550　非本征半导体材料导电类型测试方法 GB/T 2828.1—2012　计数抽样检验程序　第1部分：按接收质量限（AQL）检索的逐批检验抽样 计划 GB/T 6617　硅片电阻率测定　扩展电阻探针法 GB/T 6624　硅抛光片表面质量目测检验方法 GB/T 12964　硅单晶抛光片 GB/T 13389　掺硼掺磷掺砷硅单晶电阻率与掺杂剂浓度换算规程 GB/T 14139　硅外延片 GB/T 14141　硅外延层、扩散层和离子注入层薄层电阻的测定　直排四探针法 GB/T 14142　硅外延层晶体完整性检验方法　腐蚀法 GB/T 14146　硅外延层载流子浓度的测试　电容﹘