IEC IEC63505 Edition 1.02025-04 INTERNATIONAL STANDARD Guidelinesformeasuringthethresholdvoltage(V-)ofSiCMOSFETs IEC63505:2025-04(en) THISPUBLICATIONISCOPYRIGHTPROTECTED Copyright2025IEC,Geneva,Switzerland or by any means, electronic or mechanical, including photocopying and microfilm,without permission in writing from copyright or have an enquiry about obtaining additional rights to this publication,please contact the address below or your local EC member National Committee for further information. IEC Secretariat Tel.: +4122919 02 11 3, rue de Varembe [email protected] CH-1211Geneva 20 www.iec.ch Switzerland About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standardsforall electrical, electronic and relatedtechnologies. About IEC publications The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the latest edition, a corrigendum or an amendment might have been published. IECpublicationssearch-webstore.iec.ch/advsearchform IEC Products & Services Portal-products.iec.ch The advanced search enables to find IEC publications by a Discover our powerful search engine and read freely all the varietyof criteria(reference number,text, technical publications previews, graphical symbols and the glossary. committee, ..). It also gives information on projects, replaced and withdrawn publications. content tailored to your needs. IECJustPublished-webstore.iec.ch/justpublished Electropedia-www.electropedia.org Stay up to date on all new IEC publications. Just Published The world's leading online dictionary on electrotechnology, details all newpublications released.Availableonlineandonce containing more than 22 500 terminological entries in English a month by email. and French, with equivalent terms in 25 additional languages. Also known as the International Electrotechnical Vocabulary IECCustomerServiceCentre-webstore.iec.ch/csc (IEV) online. If you wish to give us yourfeedback on this publication or need further assistance,please contact the Customer Service Centre:[email protected] IEC IEC63505 Edition 1.0 2025-04 INTERNATIONAL STANDARD Guidelinesformeasuringthethresholdvoltage(V-)ofSiCMOSFETs INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS31.080.30 ISBN 978-2-8327-0325-0 Warning!Makesure that you obtained this publication from an authorized distributor. Registered trademark of the International Electrotechnical Commission IEC63505:2025IEC2025 CONTENTS FOREWORD 3 INTRODUCTION.. 5 1 Scope. 6 2 Normative references... 3 Terms,definitions,andlettersymbols 3.1 Terms and definitions. 6 3.2 Letter symbols 4 Requirements 5 Test circuits. 8 5.1 Test circuits 5.2 How todefine conditioning 1 Bibliography .... Figure1-Vrhysteresisobservedbyupwardanddownwardsweepmeasurement Vos=VGs,leftgraphshowsthegatebiaspatternandrightgraphshowsthe correspondingdraincurrentresponse. afterbiasing the device indeep inversion for 100 ms.. .8 Figure3-Conditioningbeforethresholdvoltagemeasurement Figure 4 -V test circuit (upper left picture), timing diagram (right graphs) and typical transfercharacteristic (lowergraph). 9 Figure 5-Alternative V test circuit (upper left picture), timing diagram (right graphs) andtypicaltransfercharacteristics(lowergraphs). 10 Figure 6 -Alternative test method (left pictures) and timing diagram (right graphs).... - 3 IEC63505:2025IEC2025 INTERNATIONALE ELECTROTECHNICALCOMMISSION GUIDELINESFORMEASURINGTHETHRESHOLDVOLTAGE(V+) OFSICMOSFETS FOREWORD 1) all national electrotechnical committees (IEC National Committees).The objectof IEC is to promote international Publicly Available Specifications (PAS)andGuides (hereafter referred to as "lEC Publication(s)").Their preparation is entrusted to technical committees; any IEc National Committee interested in the subject dealt with with the IEC also participate in this preparation.IEC collaborates closelywith the International Organization for Standardization