论文标题
掺杂对氧化钒凝胶膜特性的影响
Influence of doping on the properties of vanadium oxide gel films
论文作者
论文摘要
已经研究了使用H和W掺杂对从V2O5凝胶得出的V2O5和Vo2的性能的影响。结果表明，在低温RF氢血浆中的V2O5处理1至10分钟。导致五氧化钒的水合或其还原（取决于治疗条件），以降低钒氧化物。对于某些在放电活性区中接受血浆处理的样品，观察到具有最大含量在t〜100 k的最大含量的非平常温度依赖性。对于W掺杂的VO2膜，显示为W6+的V4+取代会导致金属 - 绝缘体过渡的温度降低。同样，已经表明，左右的初始薄膜的掺杂量降低了具有S形I-V特性的开关设备的阈值段散射，该参数根据V2O5凝胶膜。
Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maxi-mum at T ~ 100 K, is observed. For W-doped VO2 films, it is shown that substitution of V4+ with W6+ results in a decrease of the temperature of metal-insulator transition. Also, it has been shown that the doping of the initial films with ~3 at.% of W reduces the statistical scatter in the thresh-old parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films.
