论文标题
用电极重叠和周围区域的有机场效应晶体管模量光谱的解释：测定栅极绝缘体和有机半导体的电子性能
Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor
论文作者
论文摘要
有机场效应晶体管（OFET）具有电极重叠和外围区域的模量光谱已在实验和理论上进行了研究。用频率响应分析仪测量了具有电极重叠和外围区域的Regooragular聚（3-己基噻吩2,5-二苯基）（P3HT）（P3HT）的复杂阻抗。复杂的模量是从具有重叠和外围区域的OFET的等效电路中得出的，使用了四端基质方法。 P3HT OFET的模量光谱是由使用从等效电路得出的表达式成功拟合的。由于栅极绝缘体的介电性能，有机半导体的传输性能以及从低频到高频范围的接触电阻，在P3HT OFET的模量光谱中发现了三个结构。使用通过拟合获得的等效电路的电路成分的值确定了栅极绝缘子的电阻率和工作OFET的现场效应迁移率。
The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) OFETs with electrode overlap and peripheral regions was measured with a frequency response analyzer. The complex modulus was derived from an equivalent circuit of OFETs with overlap and peripheral regions using a four-terminal matrix approach. The modulus spectra of the P3HT OFETs were successfully fitted by those calculated using the expression derived from the equivalent circuit. Three structures were found in the modulus spectra of the P3HT OFETs owing to the dielectric properties of the gate insulator, transport properties of the organic semiconductor, and contact resistance from the low to high frequency ranges. The resistivity of the gate insulators and the field-effect mobility of working OFETs were determined using the values of the circuit components of the equivalent circuit obtained by fitting.
