论文标题
通过离子植入物的Mn掺杂膜的超导膜的超导性特性的精确调整
Precise tuning of the superconducting properties of Mn-doped Al films for transition edge sensors by ion-implantation
论文作者
论文摘要
金属超导体中的磁杂质对于基本科学和应用科学都很重要。在这项研究中，我们专注于稀释的Mn掺杂铝（ALMN）膜，这是用于制造过渡边缘传感器（TES）的常见超导材料。我们开发了一种多能离子植入技术来制作ALMN膜。与经常使用的溅射技术相比，离子植入物在ALMN膜中提供了对MN掺杂浓度的更精确和可靠的控制。离子植入也使我们能够定量分析超导转变温度曲线，作为MN掺杂浓度的函数。我们发现，MN掺杂剂充当磁性杂质和超导性的抑制作用，由Mn掺杂剂之间的反铁磁性Ruderman kittel Kasuya Yosida相互作用抵消。可以通过离子植入过程和植入后退火来通过缺陷工程来调整rkky的相互作用。
Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors (TES). We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise and reliable control of the Mn doping concentration in the AlMn films.The ion implantation also enables us to quantitatively analyze the superconducting transition temperature curve as a function of the Mn doping concentration. We found that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman Kittel Kasuya Yosida interaction among Mn dopants. The RKKY interaction can be tuned through defect engineering in the ion-implantation process and through post-implantation annealing.
