论文标题
MOS2电容的负压负压
Negative compressibility in MoS2 capacitance
论文作者
论文摘要
大电容增强功能可用于增加场效应晶体管（FET）的栅极电容，从而生产具有改善栅极可控性的低能消耗设备。我们报告了新出现的二维通道材料二硫化物（MOS2）中强大的电容增强效应。增强效应是由于MOS2中低载体密度状态下强的电子电子相互作用引起的。我们在单层设备中实现了约50％的电容增强，并且在双层设备中实现了10％的电容增强。但是，增强效果在多层设备（层编号> 3）中并不明显。使用Hartree-fock近似，我们说明了反向压缩性数据中相同的趋势。
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.
