论文标题
MOS2和MOSE2单层中自旋孔的深色激子的测量
Measurement of the Spin-Forbidden Dark Excitons in MoS2 and MoSe2 monolayers
论文作者
论文摘要
具有数百个MEV的结合能的激子控制过渡金属二进制元素单层的光学特性。因此，了解这些激子的精细结构对于了解这些2D材料的光电特性至关重要。 Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones.在倾斜磁场中执行的测量值可想象中性激子细胞的结构。实验结果与模型一致，考虑到交换相互作用对明亮和深色激子状态以及与磁场的相互作用的影响。
Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones. Measurements performed in tilted magnetic field provide a conceivable description of the neutral exciton fine structure. The experimental results are in agreement with a model taking into account the effect of the exchange interaction on both the bright and dark exciton states as well as the interaction with the magnetic field.
