论文标题
拓扑绝缘子候选tase3中的大磁力
Large Magnetoresistance in Topological Insulator Candidate TaSe3
论文作者
论文摘要
在拓扑绝缘子候选tase3中，从我们的高场（最多38 t）测量值中观察到大小约为1000％的大型不饱和磁阻（XMR）。从我们的shubnikov-de Hass（SDH）测量值中，分别检测到与一个孔口袋和两个电子口袋相关的两个振荡模式，这与我们的第一原则计算一致。通过执行详细的霍尔测量值，我们的两波段模型分析表现出不完善的密度比N_H/N_E在T <20 K时闭合0.9，这表明载体补偿是Tase3中的XMR。
Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.
