论文标题
高度可调的旋转轨道扭矩和各向异性磁场耐药膜中的薄膜连接到铁磁层
Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer
论文作者
论文摘要
我们研究了拓扑绝缘子（Ti）薄膜和磁绝缘子的杂化结构中的自旋荷利转化现象。我们发现一种各向异性逆旋转 - 气旋效应（ISGE）产生高度可调的自旋轨道扭矩（SOT）。集中在quasiballistic极限上，我们还预测低掺杂剂在低掺杂处具有巨大的各向异性磁力耐药性（AMR）。这些效应在厚的TI中没有对应物，取决于表面状态与平面磁化强度之间的杂交同时存在。 ISGE和AMR都对磁化强度和费米水平的位置都表现出很大的依赖性，并且可以用于纳米级的Spintronics和基于SOT的应用。
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque (SOT). Concentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance (AMR) at low dopings. These effects, which have no counterparts in thick TIs, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the ISGE and AMR exhibit a strong dependence on the magnetization and the Fermi level position and can be utilized for spintronics and SOT-based applications at the nanoscale.
