论文标题
从Julic Cyclotron的质子束对硅光电倍增子辐射硬度的研究
Study of Silicon Photomultiplier Radiation Hardness with Proton Beam from the JULIC Cyclotron
论文作者
论文摘要
在这项工作中，我们研究了暴露于Julic Cyclotron Proton Beam（能量$ \ sim $ 39 MeV）相对于其暴露前的性能的能量$ \ sim $ 39 MEV后，硅光电层流（SIPM）光传感器的性能。这项研究中使用的SIPM设备表明，其行为和击穿电压的下移发生了重大变化，多达$ \ sim $ 0.4 $ \ pm $ 0.1 V.单个光子测量似乎不再是sipm sipms在暴露于$ \ sim $ 0.2 gy（相对应的proton proton proton proton Flux flux flux flux flux flux flux flux flux）之后所研究的不再可能$ \ sim $$ ϕ_ {p} $ = 1.06x10 $^{8} $ p/cm $^{2} $）。曝光造成了对设备表面的可见损害。
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a significant change in their behavior and downward shift of their breakdown voltage by as much as $\sim$ 0.4$\pm$0.1 V. Single photon measurements appear to be no longer possible for the SiPMs under study after exposure to a dose of $\sim$ 0.2 Gy (corresponding to an integrated proton flux of $\sim$$ϕ_{p}$=1.06x10$^{8}$ p/cm$^{2}$). No visible damage to the surface of the devices was caused by the exposure.
