论文标题
在la $ _ {0.7} $ sr $ _ {0.3} $ mno $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $
Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$
论文作者
论文摘要
我们在LA0.7SR0.3MNO3（LSMO）上报道了功能分子，光学开关（二乙烯基乙烯二磷酸，DDA）的磷酸途径。如地形原子力显微镜（AFM），椭圆法，水接触角和X射线光发射光谱（XPS）所研究的，在LSMO上形成了紧凑的自组装单层（SAM）。导电AFM测量表明，LSMO/DDA的电导率低于Bare LSMO底物的电导。此外，DDA SAM的存在抑制了在C-AFM测量过程中由机械和/或偏置约束诱导的LSMO底物的已知电导转换。对于LSMO/DDA/C-AFM尖端分子连接（闭合/开放电导率约为8），观察到DDA的开放和闭合形式之间的部分光诱导的电导切换。我们表明，在长期向紫外线阐明的情况下，可以通过LSMO电极电导的不可逆性减小（约15倍）掩盖此特征。
We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.
