论文标题
高速双层石墨烯电吸附调制器在SOI波导上
High-speed double layer graphene electro-absorption modulator on SOI waveguide
论文作者
论文摘要
我们在被动SOI平台上报告了C波段双层石墨烯电吸附调制器，显示29GHz 3DB-频道和NRZ Eye-Diagrams的灭绝率范围从10 GB/s的1.7 dB到1.3 dB，至50 Gb/s。由于CVD预制的单晶生长的质量和晶圆方法的转移，因此实现了如此高的调制速度，从而允许整合高质量的可伸缩石墨烯和低接触电阻。通过演示集成在Si Photonics和可扩展方法上的高速CVD石墨烯EAM调制器，我们相信石墨烯可以满足主要要求，成为光子学的竞争技术。
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.
