论文标题
拓扑绝缘子SB2TE3薄膜中表面状态的电子孔不对称性，磁磁光谱揭示了
Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy
论文作者
论文摘要
当表面状态（SSS）在拓扑绝缘子（TIS）中形成时，它们继承了散装带的特性，包括电子孔（E-H）不对称性，但影响更大。在这里，通过将磁含量光谱与理论分析相结合，我们表明，与量子限制效应相互作用时，E-H不对称会显着修饰SS电子结构。与没有E-H不对称性的情况相比，SSS现在不仅具有不对称性，而且还具有相对于散装带的散装点，而且还具有相对于散装带的偏移和杂交缝隙的降低高达70％。我们的结果表明，E-H不对称性在薄膜限制中TIS的带工程中的重要性。
When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared to the case without e-h asymmetry, the SSs now bear not only a band asymmetry as that in the bulk but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap up to 70%. Our results signify the importance of e-h asymmetry in band engineering of TIs in the thin film limit.
