论文标题
具有原子较薄的半导体层的微腔中的偏振子相互作用
Polariton interactions in microcavities with atomically thin semiconductor layers
论文作者
论文摘要
我们研究了嵌入平面微腔内的n二维半导体层中激子 - 果龙之间的相互作用。在低能散射的极限下，我们可以忽略激子的复合性质，我们获得了旋转三链和自旋 - 单词相互作用强度的精确分析表达式，这超出了先前计算中使用的天生近似值。至关重要的是，由于狂犬病耦合和小光子脱位质量比率，与激子 - 外激体相互作用相比，强的光耦合增强了极性 - 波利顿相互作用的强度。我们此外，我们还获得了北极相互作用对n层数量的依赖性，我们强调了在多个层中存在的光学深色状态所起的重要作用。特别是，我们预测，在大多数当前使用的过渡金属二分法中，对于广泛的参数，单线相互作用强度比三重态强。这对这些材料中的极化国家凝结和其他相互作用驱动的现象产生了影响。
We investigate the interactions between exciton-polaritons in N two-dimensional semiconductor layers embedded in a planar microcavity. In the limit of low-energy scattering, where we can ignore the composite nature of the excitons, we obtain exact analytical expressions for the spin-triplet and spin-singlet interaction strengths, which go beyond the Born approximation employed in previous calculations. Crucially, we find that the strong light-matter coupling enhances the strength of polariton-polariton interactions compared to that of the exciton-exciton interactions, due to the Rabi coupling and the small photon-exciton mass ratio. We furthermore obtain the dependence of the polariton interactions on the number of layers N, and we highlight the important role played by the optically dark states that exist in multiple layers. In particular, we predict that the singlet interaction strength is stronger than the triplet one for a wide range of parameters in most of the currently used transition metal dichalcogenides. This has consequences for the pursuit of polariton condensation and other interaction-driven phenomena in these materials.
