论文标题

冷半导体的三阶直流响应中的二阶差异

Second order divergence in the third order DC response of a cold semiconductor

论文作者

Ventura, G. B., Passos, D. J., Lopes, J. M. Viana Parente, Santos, J. M. B. Lopes dos

论文摘要

在这项工作中,我们在冷半导体的三阶直流响应中介绍了二阶差异的分析表达式,可以通过不同的电场设置探测。然后,比较了该表达的结果,对于间隙石墨烯单层的响应,该表达式的响应是由三阶电导率计算的速度计计算得出的数值结果。两者之间的良好一致性验证了我们的分析表达。

In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression.

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