论文标题

Clictd:Clic Silicon Tracker的单片HR-CMOS传感器芯片

CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker

论文作者

Kremastiotis, I., Ballabriga, R., Dort, K., Egidos, N., Munker, M.

论文摘要

Clic Tracker检测器(ClictD)是一种以180美元的NM成像CMOS流程生产的单层像素化传感器芯片,建立在高抗性外延层上。该芯片在CLIC跟踪检测器研究的上下文中设计,包括$ {16 \ times128} $伸长像素的矩阵,每个像素都测量$ {300 \ times30} $ $ $ $ m $ m $ m $^2 $。为了确保迅速的电荷收集,每个细长的像素都以八个子像素进行分割,每个像素都包含一个集合二极管和一个单独的模拟前端。同时在像素数字逻辑中执行$ 10 $ NS时间垃圾箱的$ 10 $ NS时间垃圾箱和可编程范围的$ 5 $ -bit Energy测量。提出了主要的设计方面以及带有ClictD芯片实验室测量的第一个结果。

The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study, comprises a matrix of ${16\times128}$ elongated pixels, each measuring ${300\times30}$ $μ$m$^2$. To ensure prompt charge collection, every elongated pixel is segmented in eight sub-pixels, each containing a collection diode and a separate analog front-end. A simultaneous $8$-bit time measurement with $10$ ns time bins and $5$-bit energy measurement with programmable range is performed in the on-pixel digital logic. The main design aspects as well as the first results from laboratory measurements with the CLICTD chip are presented.

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