论文标题
SIC和GAN POWER设备技术中的处理问题：4H-SIC平面MOSFET和嵌入式混合动力Mishemt的案例
Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT
论文作者
论文摘要
本文旨在简要概述SIC和GAN Power Devices技术中存在的一些相关处理问题。主要的重点是将频道移动性在晶体管中的重要性放在晶体管中的重要性，这是减少罗恩和耗能的关键之一。具体而言，在4H-SIC平面MOSFET的情况下，提出了最常见的解决方案和最新趋势以改善通道活动性。在GAN的情况下，简要介绍了实现正常hemts操作的可行途径，重点是嵌入式杂种不事件的情况。
This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel mobility in transistors, which is one of the keys to reduce RON and power dissipation. Specifically, in the case of the 4H-SiC planar MOSFETs the most common solutions and recent trends to improve the channel mobility are presented. In the case of GaN, the viable routes to achieve normally-off HEMTs operation are briefly introduced, giving emphasis to the case of the recessed hybrid MISHEMT.
