论文标题
溶液处理的银硫化银纳米晶膜，用于电阻开关记忆
Solution-processed silver sulphide nanocrystal film for resistive switching memories
论文作者
论文摘要
电阻切换记忆可通过使用电化学和离子传输过程诱导高电阻（OFF）或低电阻（ON）状态来控制材料的电导率。作为银（Ag）的高温和真空的物理硫化方法的替代方法，我们建议，作为电阻开关介质，是由胶体Ag $ _ {2-X} $ s纳米晶体建造的层 - 与解决方案处理方法相符。评估了电极大小（从宏到微尺度），组成（Ag，Ti和Pt）和几何形状对设备性能的影响以及所涉及的电化学机制的影响。我们通过电子束光刻实现了优化的AG/Ti Bowtie概念概念验证配置，该配置在低功耗和可靠的$ i_ {on}/i_ {off} $比率方面满足了重新兰异设备的一般要求。这种配置表明，在数据耐力至少为20个周期的情况下，在状态和关闭状态之间可复制开关。以及$ i_ {on}/i_ {off} $比率低于10 $^3 $，低功耗（0.1V读数），它在文献中的表现优于先前的文献结果，用于用银色粉红色粉状质化纳米粒子制造的电阻层的设备。
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as resistive switching medium, a layer built from colloidal Ag$_{2-x}$S nanocrystals -compatible with solution-processed approaches. The effect of the electrode size (from macro- to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and reliable $I_{ON}/I_{OFF}$ ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an $I_{ON}/I_{OFF}$ ratio up to 10$^3$ at low power consumption (0.1V readout), which outperforms previous results in literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.
