论文标题
HBN包含的单层Mose2中的激子扩散2
Exciton diffusion in a hBN-encapsulated monolayer MoSe2
论文作者
论文摘要
激子，由电子和一个孔组成的准颗粒在低维纳米结构的光学响应中起重要作用。在这项工作中，我们研究了固定氮化硼（HBN/Mose2/hbn）之间封装的单层Mose2中的激子扩散。通过PL成像和数值求解2D扩散方程，我们揭示了HBN/MOSE2/HBN中激子迁移率的温度依赖性在低温下显示出与由复合半导体组成的量子孔的质量不同，这在质量上有所不同。 HBN/Mose2/HBN中单层Mose2的超曲平结构可能导致抑制带电的突发性散射和表面粗糙度散射。
Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between flakes of hexagonal boron nitrides (hBN/MoSe2/hBN). Through PL imaging and numerical solving the 2D diffusion equation, we revealed that temperature dependence of exciton mobility in the hBN/MoSe2/hBN shows non-saturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. Ultraflat structure of monolayer MoSe2 in the hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.
