论文标题
计算晶体管随机模型中的统计和微可逆性
Counting statistics and microreversibility in stochastic models of transistors
论文作者
论文摘要
多元波动关系是在晶体管的三个随机模型中建立的，它们是具有三个端口的电子设备，因此是两个耦合电流。在第一个模型中，晶体管没有内部状态变量，端口之间的粒子交换被描述为具有恒定速率的马尔可夫跳跃过程。在第二个模型中，速率线性依赖于内部随机变量，代表了电荷载体占用晶体管的占用。第三个模型的比率非线性取决于内部占用。对于第一个和第二个模型，还建立了有限的多元波动关系，以深入了解长期限制以多元波动关系的渐近形式的收敛。对于所有这三个模型，显示传输特性可满足接近平衡的线性状态中Onsager的相互关系，并且由于微可逆性，其在远离平衡的非线性方案中的概括。
Multivariate fluctuation relations are established in three stochastic models of transistors, which are electronic devices with three ports and thus two coupled currents. In the first model, the transistor has no internal state variable and particle exchanges between the ports is described as a Markov jump process with constant rates. In the second model, the rates linearly depend on an internal random variable, representing the occupancy of the transistor by charge carriers. The third model has rates nonlinearly depending on the internal occupancy. For the first and second models, finite-time multivariate fluctuation relations are also established giving insight into the convergence towards the asymptotic form of multivariate fluctuation relations in the long-time limit. For all the three models, the transport properties are shown to satisfy Onsager's reciprocal relations in the linear regime close to equilibrium as well as their generalizations holding in the nonlinear regimes farther away from equilibrium, as a consequence of microreversibility.
