论文标题
Hartree理论计算扭曲双层石墨烯中的准粒子特性的计算
Hartree theory calculations of quasiparticle properties in twisted bilayer graphene
论文作者
论文摘要
需要详细了解扭曲的双层石墨烯(TBLG)附近的相互作用电子,以洞悉观察到的破碎对称阶段的物理起源。在这里,我们介绍了TBLG在(半)金属相中的电子性质作为掺杂和扭曲角度的函数中TBLG的电子特性的广泛原子理论计算。具体而言,我们计算了准粒子特性,例如带状结构,状态密度(DOS)和状态的局部密度(LDOS),这些密度在光发射和隧道光谱实验中直接访问。我们发现,掺杂时的准粒子特性发生了显着变化 - 这种效果不会被紧密结合理论捕获。特别是,我们观察到部分占据的频带显着扁平,从而提高了费米水平的状态密度。我们预测,该频段在TBLG的AB/BA区域的LDO中平坦的明确特征,可以在扫描隧道实验中进行测试。我们还研究了准粒子性质对TBLG介电环境的依赖性,并发现由于强大的内部筛选,这些特性令人惊讶地稳健。最后,我们为哈特里电势提供了一个简单的分析表达,该表达能够确定准粒子性质而无需自洽计算。
A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.