论文标题
使用Yttria稳定的氧化锆氧化物的界面各向异性的快速磁性开关
Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide
论文作者
论文摘要
多年来，在Spintronics研究中，界面磁性的电压控制已被极大地强调，因为它可能会启用超低功率技术。在少数建议的方法中，磁性磁性控制的磁控制表明磁各向异性的调节很大。此外，在室温下，使用氢离子的磁离子设备最近证明了相对快速的磁化型开关，TSW 〜100 ms。但是，可能需要显着提高运行速度，以用于现代电子设备。在这里，我们证明了质子诱导的磁化切换开关的速度很大程度上取决于质子传统的氧化物。我们使用Yttria稳定的氧化锆（YSZ）实现了〜1 ms的可靠（> 103个周期）开关，这比在室温下报告的最新磁离子设备快约100倍。我们的结果表明，质子导电材料的进一步工程可能会带来实质性的改进，这可能使基于磁离子的新的低功率计算方案。
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.
