论文标题
扭曲的双层MOS $ _2 $带有较小旋转角度的电子定位
Electronic localization in twisted bilayer MoS$_2$ with small rotation angle
论文作者
论文摘要
已知Moiré模式将电子状态局限于过渡金属二甲藻元化双层中，因此将在扭曲的双层石墨烯中发现的魔法角度概念推广到半导体。在这里，我们提出了一个经过修订的Slater-Koster紧密结合模型，该模型促进了整个旋转角$θ$的扭曲双层MOS $ _2 $中对此类状态的首次可靠和系统研究。我们表明，孤立的频带以$θ\ Lessim 5-6^\ Circ $出现在低能。此外，这些频段成为“平板频带”，其特征是平均速度消失，最小的角度$θ\ Lessim 2^\ Circ $。
Moiré patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS$_2$ for the whole range of rotation angles $θ$. We show that isolated bands appear at low energy for $θ\lesssim 5 - 6^\circ$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $θ\lesssim 2^\circ$.
