论文标题
界面电荷转移和栅极诱导的单藻质INSE/GASE异质结构中的滞后
Interfacial charge transfer and gate induced hysteresis in monochalcogenide InSe/GaSe heterostructures
论文作者
论文摘要
2D Van der Waals半导体材料的异质结构为探索基本物理和潜在设备应用提供了多样化的操场。在INSE/GASE异质结构中，由2D单钙化INSE和GASE的顺序机械剥落和堆叠形成，我们观察到INSE和GASE之间的电荷转移在2D Van der Waals界面的形成以及通过栅极通过GATE通过GASE通过gASE层应用的INSE层中的电子传输中的强滞后效应。还观察到依赖栅极电压的电导衰减速率。我们将这些观察结果与INSE和GASE层之间的栅极电压依赖性动力电荷转移联系起来。
Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these observations to the gate voltage dependant dynamical charge transfer between InSe and GaSe layers.
