论文标题
多层MOS2场效应晶体管中的楼梯样转移特性
Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors
论文作者
论文摘要
分层的半导体（例如MOS2）吸引了作为后硅和cmos电子产品的通道材料的兴趣。已经非常关注单层限制，但是单层通道在野外效应晶体管（FET）方面不一定有利。因此，研究具有多层通道的FET的特征很重要。在这里，我们报告了带有去角质多层MOS2薄片的FET的楼梯状转移特性。原子力显微镜表征表明，薄片边缘的较薄梯田伴随着楼梯状的特性。异常的楼梯状特性可归因于阈值电压转移的差异，这是通过电荷转移从河道中心和边缘较薄露台之间的表面吸附物转移的。这项研究揭示了通道厚度均匀性的重要性。
Layered semiconductors, such as MoS2, have attracted interest as channel materials for post-silicon and beyond-CMOS electronics. Much attention has been devoted to the monolayer limit, but the monolayer channel is not necessarily advantageous in terms of the performance of field-effect transistors (FETs). Therefore, it is important to investigate the characteristics of FETs that have multilayer channels. Here, we report the staircase-like transfer characteristics of FETs with exfoliated multilayer MoS2 flakes. Atomic force microscope characterizations reveal that the presence of thinner terraces at the edges of the flakes accompanies the staircase-like characteristics. The anomalous staircase-like characteristics are ascribable to a difference in threshold-voltage shift by charge transfer from surface adsorbates between the channel center and the thinner terrace at the edge. This study reveals the importance of the uniformity of channel thickness.
