论文标题
室温量子旋转大厅阶段在激光图案中的几层1T'-MOS2
Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2
论文作者
论文摘要
自2D材料研究开始以来，二维拓扑绝缘子的量子旋转霍尔（QSH）阶段引起了人们的关注。尽管已经报道了较大的散装间隙，并报告了原子较薄的层中消失的边缘间隙，但通过电阻测量对QSH阶段的验证相对较少。这部分是由于底物在大型样品区域上引起的大容量间隙的均匀性和/或由氧化引起的缺陷。在这里，我们报告了使用低功率和短时激光束照射在2H半导体上模式在2H半导体阶段的1T'-phase中QSH相的观察。如该理论所预测的那样，两个不同的电阻测量揭示了标志性传输电导值〜E2/2H和E2/4H。磁场依赖性，扫描隧道光谱和计算支持室温QSH相的出现。尽管仍然需要进一步的实验验证，但我们的结果为室温拓扑设备提供了可行的应用。
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.
