论文标题
异常激烈厅效应
Anomalous Exciton Hall Effect
论文作者
论文摘要
众所周知，电气中性激子仍然可能受到交叉的电场和磁场的影响，这使得它们沿垂直于两个场的方向移动。我们表明，在没有外部电场的情况下，在存在外部磁场的情况下通过带电杂质散射激子流的情况下出现了类似的效果。结果，激子的流动改变了其传播的方向，该方向可以用激子的霍尔电导率描述。我们开发了这种效果的理论，我们称之为异常的激元霍尔效应，以将其与山谷选择性金属二进制基因生成层中的山谷选择性激子转运产生的激子效应区分开。根据我们的估计，对于传统的GAAS量子井中的光学活动或明亮的激子，这种效果相对较弱，但是由于生命的差异，对于光学上的非活动或深色激子而言，它对于光学上的非活动或深色激子而言变得很重要。这使得提出的效果成为黑暗和明亮激子空间分离的方便工具。
It is well known that electrically neutral excitons can still be affected by crossed electric and magnetic fields that make them move in a direction perpendicular to both fields. We show that a similar effect appears in the absence of external electric fields, in the case of scattering of an exciton flow by charged impurities in the presence of the external magnetic field. As a result, the exciton flow changes the direction of its propagation that may be described in terms of the Hall conductivity for excitons. We develop a theory of this effect, which we refer to as the anomalous exciton Hall effect, to distinguish it from the exciton Hall effect that arises due to the valley selective exciton transport in transition metal dichalcogenides. According to our estimations, the effect is relatively weak for optically active or bright excitons in conventional GaAs quantum wells, but it becomes significant for optically inactive or dark excitons, because of the difference of the lifetimes. This makes the proposed effect a convenient tool for spatial separation of dark and bright excitons.
