论文标题
与WSE $ _2 $相邻的石墨烯中旋转厅效应高效旋转转换的高效旋转转换的可调性
Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$
论文作者
论文摘要
接近性效应打开了将特性从一种材料转移到另一种材料中的方法，在二维材料中尤其重要。在范德华异质结构中，可以使用过渡金属二甲化合物（TMD）来增强石墨烯的自旋轨道偶联，从而预测了栅极可控的旋转式转换转换（SCC）。在这里，我们首次报告并量化了与WSE $ _2 $相邻到室温的石墨烯中的SHE。与其他石墨烯/TMD设备不同，唯一的SCC机制是自旋霍尔效应，没有观察到Rashba-Edelstein效应。重要的是，我们能够通过施加门电压来控制SCC。 SCC显示出高效率，以大于20 nm的前所未有的SCC长度测量。这些结果表明，二维材料能够促进新型基于旋转的设备和未来应用的实施。
The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.
