论文标题
Mg掺杂对吸附和（ga）n超晶格的影响
Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices
论文作者
论文摘要
我们详细研究了在血浆辅助分子束外延（PAMBE）期间，在GAN表面掺入IN和MG的机制。首先，我们研究了在视力线中通过四极质谱（QMS）在没有浆液量的Mg的情况下进行解吸的动力学。其次，我们探索了Mg掺杂在不同时间（INN/GAN）供应循环的效果重复10次，以形成（IN，GA）N/GAN超级晶格（SLS）。通过通过X射线衍射（XRD）和次级离子质谱法（SIMS）对这些SLS的补充前静脉研究，我们发现在单层厚（IN，GA）N层中，当MG在MG中含量不同时降低，但否则会大大减少，但否则它会大大减少。相比之下，与GAN屏障相比，（in Ga）N单层（in Ga）N单层的MG浓度强烈增加。我们将此发现归因于for Mg的表面活性剂效应，从而降低了N.存在N. GAN中Mg的结合能。
We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the presence of Mg either without or with N supply from the plasma cell by quadrupole mass spectrometry (QMS) in the line of sight. Second, we have explored the effect of Mg doping at a different time along the cycle of (InN/GaN) supply repeated 10 times to form (In,Ga)N/GaN superlattices (SLs). By the complementary ex-situ investigation of these SLs by X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS), we found that in monolayer-thick (In,Ga)N layer, the In content was maximized when Mg was not supplied simultaneously to In, but it drastically decreased otherwise. In contrast, the Mg concentration strongly increased in the (In,Ga)N monolayers compared to the GaN barriers. We attribute this finding to the surfactant effect of In for Mg, which decreases the binding energy of Mg in GaN in presence of N.
