论文标题
SIC中的水平交叉诱导的自旋现象：一项理论研究
Level-crossing induced spin phenomena in SiC: a theoretical study
论文作者
论文摘要
提出了一种理论方法来治疗缺陷颜色中心中的自旋动力学。该方法明确考虑了缺陷中心的基态和激发状态的自旋动力学以及涉及基态和激发状态的旋转状态依赖性过渡以及附加的中间状态。所提出的理论用于治疗自旋依赖性现象是碳化硅，即在spin-3/2硅接面中心，VSI或V2中心中。磁场依赖性光致发光强度和光学检测到的磁共振光谱的理论预测表明，交叉现象在基态和激发状态的自旋动力学中的重要作用。结果与先前发布的实验数据非常吻合[Phys。修订版X，6（2016）031014]。
A theoretical approach is proposed to treat the spin dynamics in defect color centers. The method explicitly takes into account the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state and excited state, as well as an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena is silicon carbide, namely, in spin-3/2 silicon-vacancy centers, VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X, 6 (2016) 031014].
