论文标题
实现室温电气传输应用的标准
Criteria for realizing room temperature electrical transport applications of topological materials
论文作者
论文摘要
拓扑材料中发现的不寻常的电子状态可以使新一代的设备和技术能够实现，但是长期以来一直在寻找没有有害平行批量传导的材料。这可能是由于缺陷或热活化的载体引起的。在这里，我阐明了材料需要满足以实现拓扑状态所支配的运输特性所需的标准，这是拓扑设备的必要性。这对于三维拓扑绝缘子，3D Dirac材料和1D量子异常的霍尔绝缘子证明了这一点，尽管这可以应用于类似的系统。关键参数是电子带隙，介电常数和载体有效质量，这些质量在什么情况下（缺陷密度，温度等）决定了不需要的体积状态将与拓扑状态平行进行。由于这些基本原子特性从根本上确定，因此可以使用简单的化学论证来浏览相空间以最终找到改进的材料。这将使能够快速识别具有改进特性的新系统，这对于设计新材料系统和推进新一代拓扑技术至关重要。
The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. Here, I clarify the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device. This is demonstrated for 3-dimensional topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic band gap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to design new materials systems and push into a new generation of topological technologies.
