论文标题
由于内部的rkky/br相互作用，在石墨烯 - 铁烯界面上的dzyaloshinskii-moriya相互作用的起源
An Origin of Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction
论文作者
论文摘要
我们提出了一种巡回载体介导的Rkky相互作用和虚拟激发介导的Bloemben-Rowland（BR）相互作用的理论，这些磁矩在石墨烯中与铁磁膜的接近效应引起的磁矩之间的相互作用。我们表明，rkky/br相互作用由海森伯格，伊辛和dzyaloshinskii-moriya（DM）术语组成。在最近的距离的情况下，我们估计RKKY/BR相互作用的DM项的数字约为0.13 MEV，对于石墨烯/CO接口，这与DM相互作用的实验结果一致，$ 0.16 \ pm pm 0.05 $ MEV。我们的计算表明，Intralayer Rkky/BR相互作用可能是石墨烯 - Ferromagnet接口中DM相互作用的物理起源。这项工作提供了一个新的观点，可以理解石墨烯/铁磁系统中的DM相互作用。
We present a theory of both the itinerant carrier-mediated RKKY interaction and the virtual excitations-mediated Bloembergen-Rowland (BR) interaction between magnetic moments in graphene induced by proximity effect with a ferromagnetic film. We show that the RKKY/BR interaction consists of the Heisenberg, Ising, and Dzyaloshinskii-Moriya (DM) terms. In the case of the nearest distance, we estimate the DM term from the RKKY/BR interaction is about 0.13 meV for the graphene/Co interface, which is consistent with the experimental result of DM interaction $0.16 \pm 0.05$ meV. Our calculations indicate that the intralayer RKKY/BR interaction may be a possible physical origin of the DM interaction in the graphene-ferromagnet interface. This work provides a new perspective to comprehend the DM interaction in graphene/ferromagnet systems.
