论文标题
电子掺杂的铜塔中的电阻率饱和
Resistivity saturation in an electron-doped cuprate
论文作者
论文摘要
我们报告了轻度掺杂的电阻率饱和度（$ x \ sim 0.10）$种植的电子掺杂的样品la $ _ $ _ {2-x} $ ce $ _x $ _x $ cuo $ _4 $（LCCO）。饱和度发生在电阻率值以大致与现象学Mott-ioffe-Regel标准一致，一旦这些材料的低有效载体密度包括在分析中。这些结果表明，至少对于光掺杂，这些材料的高温金属相并不一定是奇怪的，可以理解为仅仅是一种低密度金属。
We report the observation of resistivity saturation in lightly doped ($x\sim 0.10)$ as-grown samples of the electron-doped cuprate La$_{2-x}$Ce$_x$CuO$_4$ (LCCO). The saturation occurs at resistivity values roughly consistent with the phenomenological Mott-Ioffe-Regel criterion once the low effective carrier density of these materials is included in the analysis. These results imply that, at least for light doping, the high-temperature metallic phase of these materials is not necessarily strange and may be understood as simply a low-density metal.
