论文标题
4H-SIC上不均匀的碳化碳纤维schottky屏障的电气性能
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
论文作者
论文摘要
在本文中，研究了4H-SIC上碳化钨（WC）Schottky屏障的电气行为。首先，在一组等效二极管上进行的统计电流电压（I-V）分析在700°C退火后表现出对称的高斯高度分布的对称高斯的分布，其中低Schottky屏障高度（$ $φ$ b = 1.05 ev）和理想的n = 1.06 = 1.06。屏障高度的低值使如此的WC接触成为一个有趣的候选者，以减少4H-SIC Schottky二极管中的传导损失。通过监视I-V特性的温度依赖性以及相关参数的行为$φ$ b和n，进行了更深入的表征。随着温度的升高，屏障高度的增加和理想因素的降低表明WC/4H-SIC Schottky接触的横向不均匀性，通过调用Tung的模型来描述。有趣的是，可以通过在热电场发射模型中考虑与不均匀性相关的温度相关屏障高度来描述泄漏电流在反向偏置下的温度依赖性。这些结果可用于预测在手术条件下WC/4H-SIC Schottky二极管的行为。
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700°C, where a low Schottky barrier height ($Φ$B=1.05 eV) and an ideality factor n=1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out, by monitoring the temperature dependence of the I-V characteristics and the behavior of the relevant parameters $Φ$B and n. The increase of the barrier height and decrease of the ideality factor with increasing temperature indicated a lateral inhomogeneity of the WC/4H-SiC Schottky contact, which was described by invoking the Tung's model. Interestingly, the temperature dependence of the leakage current under reverse bias could be described by considering in the thermionic field emission model the temperature dependent barrier height related to the inhomogeneity. These results can be useful to predict the behavior of WC/4H-SiC Schottky diodes under operative conditions.
