论文标题
WSE2/WS2Moiré超级晶格中相关电子状态的纳米级电导率成像
Nanoscale Conductivity Imaging of Correlated Electronic States in WSe2/WS2 Moiré Superlattices
论文作者
论文摘要
我们使用微波阻抗显微镜报告了相关电子状态的纳米级电导率成像。非连接的微波探针使我们能够观察Mott绝缘状态,每个Moiré单位电池一个孔持续使用,该温度持续至150 K,与其他特征技术一致。此外,我们首次以每个moiré单位电池的一个电子为单位识别莫特绝缘状态。相关状态的明显不均匀性直接在异质双层区域可视化,这表明Moiré超晶格电位或静电掺杂中的局部疾病。我们的工作为2DMoiré系统提供了重要的见解,直到微观水平。
We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the hetero-bilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic doping. Our work provides important insights on 2D moiré systems down to the microscopic level.