论文标题
晶圆尺度的低损失硅锂光子综合电路
Wafer-scale low-loss lithium niobate photonic integrated circuits
论文作者
论文摘要
薄膜硅锂（LN）光子集成电路（图片）可以在电磁和非线性光学设备中实现超高性能。迄今为止，实现仅限于Chip级概念验证。在这里，我们演示了具有深紫外线图的4英寸和6英寸晶圆上制造的单片LN图片，并显示出光滑，均匀的蚀刻，在晶片尺度上实现了0.27 dB/cm的光学传播损失。我们的结果表明，LN图片在根本上是可扩展的，并且可能具有很高的成本效益。
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
