论文标题
使用新颖的晶圆键入技术制造的外延al/gaas/al tri层
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
论文作者
论文摘要
具有晶圆键 - 键入技术制造的具有高质量GAA和原始界面厚度的外延al/gaas/al结构。 III-V半导体/Al结构是通过III-V半导体底物上的分子束外延生长的，并粘结到硅和蓝宝石。选择性蚀刻用于去除III-V底物，然后进行表面清洁和超导体再生，从而在蓝宝石或硅底物上产生外延al/gaas/al tri层。结构以反射高能电子衍射，原子力显微镜，X射线光电子光谱，透射电子显微镜和X射线衍射为特征。讨论了这些结构在量子信息处理领域的应用。
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
