论文标题

在旋转对称拓扑绝缘子和超导体中脱节的散装型束缚对应关系

Bulk-boundary-defect correspondence at disclinations in rotation-symmetric topological insulators and superconductors

论文作者

Geier, Max, Fulga, Ion Cosma, Lau, Alexander

论文摘要

我们研究了地面拓扑结构与晶格的拓扑之间的联系,这是通过异常状态在脱节处的存在 - 拓扑晶格缺陷仅在局部违反旋转对称性。我们首先通过Volterra过程在二阶拓扑阶段中表明存在异常披露状态,例如Majorana零模型或螺旋电子状态。然后,使用旋转和翻译对称性的拓扑晶体的框架来构建$ d $维晶体拓扑阶段,然后我们确定对$(D-2)$ - 维度异常披露状态的所有贡献。我们为两个和三个维度的拓扑绝缘子和超导体的所有cartan对称类别执行此过程,并确定块状拓扑,边界签名和披露异常之间的对应关系是否是唯一的。

We study a link between the ground-state topology and the topology of the lattice via the presence of anomalous states at disclinations -- topological lattice defects that violate a rotation symmetry only locally. We first show the existence of anomalous disclination states, such as Majorana zero-modes or helical electronic states, in second-order topological phases by means of Volterra processes. Using the framework of topological crystals to construct $d$-dimensional crystalline topological phases with rotation and translation symmetry, we then identify all contributions to $(d-2)$-dimensional anomalous disclination states from weak and first-order topological phases. We perform this procedure for all Cartan symmetry classes of topological insulators and superconductors in two and three dimensions and determine whether the correspondence between bulk topology, boundary signatures, and disclination anomaly is unique.

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