论文标题
磷酸纳米晶体管的蒙特卡洛分析
Monte Carlo analysis of phosphorene nanotransistors
论文作者
论文摘要
关于二维（2D）材料的实验研究仍处于早期阶段，并且用于筛选这些材料的大多数理论研究仅限于自由居住的2D层中的室温载体运动。随着设备朝纳米尺度长度移动的尺寸，室温载流子运动（一种平衡概念）可能不是控制基于这些2D材料的设备性能的主要数量，因为电子传输发生在强大的OFF OFF-ALW-AREV-EQUILIBRIM条件下。在这里，我们说明了这些非平衡条件，对于单层磷烯（单层黑磷），使用蒙特卡洛方法与poisson方程相结合，显示了短通道N-MOSFET的设备仿真结果，包括完整的频段和完整的电子源矩阵元素，从DLACE和PHONON MATRIX ELEMENTION获得。我们的模拟揭示了磷烯在纳米传递者中作为通道材料的性能的明显固有局限性。
Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the room-temperature carrier-mobility in the free standing 2D layers. With the dimensions of devices moving towards nanometer-scale lengths, the room-temperature carrier-mobility -- an equilibrium concept -- may not be the main quantity that controls the performance of devices based on these 2D materials, since electronic transport occurs under strong off--equilibrium conditions. Here we account for these non-equilibrium conditions and, for the case of monolayer phosphorene (monolayer black phosphorus), show the results of device simulations for a short channel n-MOSFET, using the Monte Carlo method coupled with the Poisson equation, including full bands and full electron-phonon matrix elements obtained from density functional theory. Our simulations reveal significant intrinsic limitations to the performance of phosphorene as a channel material in nanotransistors.
