论文标题
通过使用CO/FE复合层，巨型垂直磁各向异性增强在基于MGO的磁性隧道连接处的增强
Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer
论文作者
论文摘要
具有垂直环形的磁性隧道连接构成了自旋转移型磁随机捕获记忆（STT-MRAM）的基础，该记忆（STT-MRAM）是非挥发性，快速，密集的，并且具有准无线耐用的耐力和低功耗。根据密度功能理论（DFT）计算，我们提出了一个磁性隧道连接的替代设计，其中包括Fe（N）CO（N）CO（M）Fe（N）/MGO储存层，其垂直磁性各向异性（PMA）的增强层大大增强，将几种MJ/M2升至界面的跨性别式APMA，并在跨越的次数上进行了bcco unductud bcgo bcgo。 Co.这种巨大的增强功能在增加薄膜厚度时主导了消极的能量。从Julliere模型估计的隧道磁磁磁力（TMR）与纯Fe/Mgo情况相当。我们讨论了结构现实生活中的优势和陷阱，并提出了Fe（3ml）CO（4ML）Fe（3ML）作为基于MGO的STT-MRAM细胞的存储层。紧张的BCC CO中的大PMA通过MGO施加的应变在Bruno模型的框架中解释了，随之而来的是DYZ和DZ2少数型旋带的能量的变化。
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.
