论文标题
磁性掺杂（BI，SB）$ _ 2 $ te $ _3 $薄膜引起的拓扑相变
Topological Phase Transitions Induced by Disorder in Magnetically Doped (Bi, Sb)$_2$Te$_3$ Thin Films
论文作者
论文摘要
我们研究了通过使用大规模传输模拟通过无序区域耦合与量子旋转霍尔制度中的储存池的大规模传输模拟，从而在磁掺杂（BI，SB）中引起了拓扑相变。除了疾病强度外，丰富的相图还很大程度上取决于磁交换场，费米水平以及在膜的不息和干净的极限下的初始拓扑状态。在最初在非零交换场的最初微不足道的系统中，改变疾病的强度可以诱导从正常绝缘的过渡，再到量子异常的大厅，然后是旋转的切割绝缘，最后是安德森绝缘状态。对于最初具有拓扑的系统，可以诱发类似的序列，但仅从量子异常的霍尔状态开始。随着费米水平的变化，我们发现了相似的相似相图，包括从量子异常大厅到旋转的绝缘状态的过渡，该状态表现为量子异常霍尔和金属状态的混合物，类似于最近的实验报告。
We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)$_2$Te$_3$ thin films, by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at non-zero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating, to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. While for a system with topology initially, a similar sequence, but only starting from the quantum anomalous Hall state, can be induced. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.
