论文标题
由于标量和矢量电势电子散射引起的扩散极限的石墨烯电阻率
Graphene resistivity in diffusive limit due to scalar and vector potential electron-phonon scattering
论文作者
论文摘要
我们通过在扩散极限内通过Keldysh Greens功能方法计算出未筛选和筛选的标量和矢量电势电子声子与无序石墨烯的电阻率的贡献。我们在DP和VP耦合的清洁和强杂质的渐近限制中获得了分析结果，在这些限制下，这与电阻率行为非常吻合。我们发现完整的数值结果接近了极限限制的分析结果，但在这些限制之间给出了不同的温度依赖性。石墨烯电阻率已被研究为温度，平均自由路径和载体密度的功能。我们还评估了托马斯·费米（Thomas Fermi）和随机相位近似介电函数的筛选行为，并获得了温度功率指数。我们发现，在没有筛查的情况下，当电子疾病小于关键失调限制时，与DP偶联相比，与VP偶联相关的两个耦合机制受到不同的影响，并且与DP偶联相比，与VP偶联相关的弛豫率受到障碍的抑制，并且DP耦合受到障碍的增强。
We calculate the contribution of unscreened and screened scalar and vector potential electron acoustic phonon coupling to resistivity in disordered graphene through Keldysh Greens function method within the diffusive limit. We obtain analytical results in the asymptotic limits of clean and strong impurities for both DP and VP coupling, which is in observed to be in good agreement with the resistivity behavior in these limits. We find that the complete numerical results approach the analytical result in the extreme limits, but give different temperature dependencies in between these limits. The graphene resistivity has been investigated as functions of temperature, mean free path and carrier density. We also evaluated the screened behavior in the Thomas Fermi and Random phase approximation dielectric function and obtained the temperature power exponents. We find that in the absence of screening when the electronic disorder is less than the critical disoeder limit, the two coupling mechanisms are affected differently and the relaxation rate associated with the VP coupling is suppressed by disorder as compared to the DP coupling, and the DP coupling is enhanced by disorder.
