论文标题
候选淋巴结半明确CAAGP中化学掺杂引起的高弹性载体
High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP
论文作者
论文摘要
我们报告了候选节点线半径CAAGP的单晶的电子特性。 CAAGP的运输特性在孔掺杂的节点线半学的框架内被理解。相比之下，掺杂PD的CAAGP显示出低磁场处的磁化率急剧增加，而在低温下，电阻率的强烈降低可能是由于抗自传弱引起的。 HALL电导率数据表明，PD掺杂的CAAGP不仅具有由PD掺杂引起的孔载体，而且还具有高弹性电子载体在DIRAC点附近。 PD掺杂的CAAGP的电阻率也显示出一个超导转变，开始温度为1.7-1.8 k。
We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.
