论文标题
Delta-Doped \ B {Eta} -GA2O3胶片具有低FWHM电荷曲线，由金属有机蒸气或外观增长
Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
论文作者
论文摘要
我们报告了硅掺杂\ b {eta} -ga2o3胶片的低温Movpe生长，其低FWHM。使用次级离子质谱，电容 - 电压和霍尔技术来表征生长的薄膜。模拟人生的测量表明，表面隔离是Movpe成长膜中大型FWHM的主要原因。观察到表面隔离系数（R）可以减少生长温度的降低。在600°C下生长的膜显示出9.7 x 1012 cm-2的电子浓度，而FWHM为3.2 nm。外延膜的高分辨率扫描/透射电子显微镜并未揭示出三角洲板和周围区域的晶体质量的明显可观察到的降解。在Fe掺杂的底物上对三角洲掺杂膜的霍尔测量结果显示，板电荷密度为6.1 x 1012 cm-2，载流子迁移率为83 cm2/v。 s。在Movpe生长\ b {eta} -GA2O3中实现尖锐的增量掺杂曲线是对高性能设备应用的希望。
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown \b{eta}-Ga2O3 is promising for high performance device applications.
