论文标题
混合拓扑绝缘子BI2SE3-XTEX的高场磁电流（x = 0，1，2＆3）
High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)
论文作者
论文摘要
该文章包括BI2SE3-XTEX（X = 0、1、2和3）混合拓扑绝缘子（MTI）单晶的结构，微结构和物理性质分析。所有晶体均通过自动升华方法通过优化的固态反应途径生长。这些MTI通过XRD（X射线衍射），SEM（扫描电子显微镜），EDAX（能量分散光谱法）进行了良好的特征，从而通过RT（电阻VS温度）降低到10K到10K以及磁抑制（MR）测量（MR）测量（MR）在5K上的物理特性（电阻VS温度）在5K上均为10 teT teTERLA。 MR截然不同，从MTI中的X = 0到X = 3，从巨大的400％下降到20％和5％，最终降至315％。在本文中通过HLN（hikami-larkin-nagaoka）方程式解释了MR的这种迷人行为，并提供了附加的术语。本文不仅提出了MT中MR的令人着迷的行为，而且还通过竞争WAL（弱反定位）和WL（弱定位）传导过程来解释原因。
The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state reaction route via the self-flux method. These MTI are well characterized through XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy), EDAX (Energy Dispersive spectroscopy), and thereby, the physical properties are analyzed through the RT (Resistance vs temperature) down to 10K as well as the magneto-resistance (MR) measurements (at 5K) in a magnetic field of up to 10 Tesla. The MR drastically varies from x=0 to x=3 in MTI, from a huge 400 percent, it goes down to 20 percent and 5 percent and eventually back to 315 percent. This fascinated behaviour of MR is explained in this article through HLN (Hikami-Larkin-Nagaoka) equation and an additional term. This article not only proposed the mesmerizing behavior of MR in MTI but also explains the reason through competing WAL (Weak Anti-Localization) and WL (Weak Localization) conduction processes.
