论文标题
抗铁磁拓扑绝缘子MNBI2TE4中表面诱导的线性磁倍率
Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4
论文作者
论文摘要
通过对抗磁性拓扑绝缘子MNBI2TE4（MBT）厚膜的彻底磁通型转运研究，具有二维（2D）特征的正线性磁磁力（LMR）在高垂直磁场和温度中发现至少260 K的状态。 MBT。我们将2D LMR归因于MBT的高动力表面状态，从而揭示了厚MBT膜中表面状态的传输特征。还注意到了MBT的Neel温度附近LMR的抑制，这可能表明由于MBT的顺磁性 - 抗磁性相变，表面状态的间隙打开。除此之外，该疾病和量子LMR模型在解释观察到的LMR方面的失败表明必须调用新物理学以了解这种现象。
Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MBT is also noticed, which might suggest the gap opening of surface states due to the paramagnetic-antiferromagnetic phase transition of MBT. Besides these, the failure of the disorder and quantum LMR model in explaining the observed LMR indicates new physics must be invoked to understand this phenomenon.
