论文标题
硅功率二极管的多色角度分析的双角度分析
Polychromatic angle resolved IBIC analysis of silicon power diodes
论文作者
论文摘要
本文介绍了基于离子束诱导的电荷（IBIC）技术的实验方法，也描述了相关的解释模型，这些模型被用来表征功率二极管的电子特征。使用不同的质子能（从1.2到2.0 MeV），发射率和施加的偏置电压获得了稳定光谱。离子探针范围的调节，结合了耗竭层的扩展的调节，可以准确校准电荷收集效率尺度，在厚（6微米）Al电极下方的死层和少数载体生命周期以下。分析是通过使用基本的IBIC理论提取的简化模型进行的，该模型被证明是适合解释稳定光谱作为所有实验条件的函数并表征设备的函数的，既出于与静电和重组过程有关的内容。
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were acquired using different proton energies (from 1.2 to 2.0 MeV), angles of incidence, and applied bias voltages. The modulation of the ion probe range, combined with the modulation of the extensions of the depletion layer, allowed the charge collection efficiency scale to be accurately calibrated, the dead layer beneath the thick (6 micrometer) Al electrode and the minority carrier lifetime to be measured. The analysis was performed by using a simplified model extracted from the basic IBIC theory, which proved to be suitable to interpret the behaviour of the IBIC spectra as a function of all the experimental conditions and to characterize the devices, both for what concerns the electrostatics and the recombination processes.
