论文标题
回忆滞后的傅立叶签名
The Fourier signatures of memristive hysteresis
论文作者
论文摘要
经常在周期性驾驶条件下研究具有记忆力的电阻，有时称为回忆元素（例如重新兰细胞），但很少关注其记忆响应的傅立叶特征（滞后）。在这里，我们通过实验证明，可以通过某些傅立叶串联系数的值明确地将回忆系统的滞后与系统的线性或非线性响应明确区分。我们还表明，傅立叶系列收敛取决于驱动条件，并引入了磁滞量度。这些结果可用于量化电阻性记忆的内存含量，并根据激发信号调整其傅立叶光谱。
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.
