论文标题
抗铁磁铁Hosbte中的拓扑电子结构
Topological electronic structure in the antiferromagnet HoSbTe
论文作者
论文摘要
磁性拓扑材料,其中时间反转对称性被损坏,托管各种外来量子现象,包括量子异常的霍尔效应,轴突绝缘子状态和majoraga fermions。磁拓扑材料的研究是凝结物理物理学的最前沿。最近,已经报道了各种磁性拓扑材料,例如Mn $ _3 $ SN,CO $ _3 $ sn $ _2 $ s $ _2 $,Fe $ _3 $ sn $ _2 $,MNBI $ _2 $ _2 $ TE $ _4 $。在这里,我们通过角度分辨的光发射光谱测量值和第一原理计算,报告了抗firomagnet中拓扑电子结构的观察。我们证明,当忽略自旋轨道耦合(SOC)时,Hosbte是一条半圆线线半径。但是,我们的理论计算表明,Hosbte中强的SOC完全散布了节点线,并将系统驱动到弱拓扑绝缘体状态,每一层都是二维拓扑绝缘子。由于Hosbte中的SOC很强,因此差距沿特定方向的数百个MEV占数百个MEV,这是我们的ARPES测量值直接观察到的。 Hosbte中磁性顺序和拓扑特性的存在使其成为实现外来量子设备的有希望的材料。
Magnetic topological materials, in which the time-reversal symmetry is broken, host various exotic quantum phenomena, including the quantum anomalous Hall effect, axion insulator states, and Majorana fermions. The study of magnetic topological materials is at the forefront of condensed matter physics. Recently, a variety of magnetic topological materials have been reported, such as Mn$_3$Sn, Co$_3$Sn$_2$S$_2$, Fe$_3$Sn$_2$, and MnBi$_2$Te$_4$. Here, we report the observation of a topological electronic structure in an antiferromagnet, HoSbTe, a member of the ZrSiS family of materials, by angle-resolved photoemission spectroscopy measurements and first-principles calculations. We demonstrate that HoSbTe is a Dirac nodal line semimetal when spin-orbit coupling (SOC) is neglected. However, our theoretical calculations show that the strong SOC in HoSbTe fully gaps out the nodal lines and drives the system to a weak topological insulator state, with each layer being a two-dimensional topological insulator. Because of the strong SOC in HoSbTe, the gap is as large as hundreds of meV along specific directions, which is directly observed by our ARPES measurements. The existence of magnetic order and topological properties in HoSbTe makes it a promising material for realization of exotic quantum devices.