论文标题
$ \ textit {ab intib} $传输电子显微镜的键合描述
$\textit{ab initio}$ description of bonding for transmission electron microscopy
论文作者
论文摘要
通常需要进行透射电子显微镜(TEM)图像或衍射模式的模拟来解释其对比度并提取样品特征。对于材料的高分辨率相位对比度成像尤其如此,但是基于原子模型的电子散射模拟被广泛用于材料科学和结构生物学中。由于电子散射是由核心核所支配的,因此散射电位通常由广泛应用的独立原子模型描述。这种近似值是快速且相当准确的,尤其是对于扫描TEM(stem)环形暗场对比度,但它完全忽略了价值粘结及其对传输电子的影响。但是,电子显微镜的新出现趋势是使用新的仪器和方法从每个电子中提取最大信息。这在诸如4D茎与材料科学中的PtyChography以及结构生物学中的低温微晶电子衍射相结合的技术的日益普及中很明显,在散射潜力的微妙差异中可能是可测量的,并且包含其他见解。因此,基于从第一原理获得的静电电位的电子散射模拟的兴趣越来越大,主要是通过密度功能理论,该理论以前主要是全息图所必需的。在这篇综述中,我们讨论了这些发展的动机和基础,调查了迄今为止已发表的开创性工作,并为未来提供了前景。我们认为,物理上更好的合理性$ \ textit {ab intio} $描述散射电位对越来越多的系统既有用,也可以可行,我们希望这种模拟能够稳步增强受欢迎程度和重要性。
The simulation of transmission electron microscopy (TEM) images or diffraction patterns is often required to interpret their contrast and extract specimen features. This is especially true for high-resolution phase-contrast imaging of materials, but electron scattering simulations based on atomistic models are widely used in materials science and structural biology. Since electron scattering is dominated by the nuclear cores, the scattering potential is typically described by the widely applied independent atom model. This approximation is fast and fairly accurate, especially for scanning TEM (STEM) annular dark-field contrast, but it completely neglects valence bonding and its effect on the transmitting electrons. However, an emerging trend in electron microscopy is to use new instrumentation and methods to extract the maximum amount of information from each electron. This is evident in the increasing popularity of techniques such as 4D-STEM combined with ptychography in materials science, and cryogenic microcrystal electron diffraction in structural biology, where subtle differences in the scattering potential may be both measurable and contain additional insights. Thus, there is increasing interest in electron scattering simulations based on electrostatic potentials obtained from first principles, mainly via density functional theory, which was previously mainly required for holography. In this Review, we discuss the motivation and basis for these developments, survey the pioneering work that has been published thus far, and give our outlook for the future. We argue that a physically better justified $\textit{ab initio}$ description of the scattering potential is both useful and viable for an increasing number of systems, and we expect such simulations to steadily gain in popularity and importance.